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参数资料
| 型号： | AUIRLS3036 |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 236K |
| 代理商： | AUIRLS3036 |
AUIRLS3036
2
www.irf.com
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Limited by TJmax, see Fig. 14, 15, 22a, 22b for typical repetitive
avalanche performance.
RθJC value shown is at time zero.
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 25Ω, IAS = 165A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 165A, di/dt ≤ 430A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
11
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.061 ––– V/°C
–––
1.9
2.4
–––
2.2
2.8
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
gfs
Forward Transconductance
340
–––
S
RG(int)
Internal Gate Resistance
–––
2.0
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
91
140
Qgs
Gate-to-Source Charge
–––
31
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
51
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
40
–––
td(on)
Turn-On Delay Time
–––
66
–––
tr
Rise Time
–––
220
–––
td(off)
Turn-Off Delay Time
–––
110
–––
tf
Fall Time
–––
110
–––
Ciss
Input Capacitance
––– 11210 –––
Coss
Output Capacitance
–––
1020
–––
Crss
Reverse Transfer Capacitance
–––
500
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
–––
1430
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
1880
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
(Body Diode)
ISM
Pulsed Source Current
–––
(Body Diode)
e
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
62
–––
TJ = 25°C
VR = 51V,
–––
66
–––
TJ = 125°C
IF = 165A
Qrr
Reverse Recovery Charge
–––
310
–––
TJ = 25°C
di/dt = 100A/μs
g
–––
360
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
4.4
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 10V, ID = 165A
VGS = -16V
showing the
VDS = 30V
Conditions
VGS = 4.5V g
VGS = 0V
VDS = 50V
= 1.0MHz
VGS = 0V, VDS = 0V to 48V i
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 165A g
VDS = VGS, ID = 250μA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
ns
VGS = 0V, VDS = 0V to 48V h
MOSFET symbol
TJ = 25°C, IS = 165A, VGS = 0V g
integral reverse
p-n junction diode.
VGS = 16V
nC
μA
nA
nC
ns
RDS(on)
Static Drain-to-Source On-Resistance
pF
A
270
1100
VGS = 4.5V, ID = 140A g
m
Ω
ID = 165A
RG = 2.1Ω
VGS = 4.5V g
VDD = 39V
ID = 165A, VDS =0V, VGS = 4.5V
Conditions
ID = 165A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRLS3036TRR | 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRLS4030-7P | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030-7TRR | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030-7TRL | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030 | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRLS3036-7P | 功能描述:MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036-7TRL | 功能描述:MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036-7TRR | 功能描述:MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036TRL | 功能描述:MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036TRR | 功能描述:MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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