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参数资料
| 型号： | AUIRLS3036 |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 236K |
| 代理商： | AUIRLS3036 |
AUIRLS3036
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 165A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS
TOP
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
2.7V
≤60μs PULSE WIDTH
Tj = 25°C
2.7V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
2.7V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
2.7V
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 48V
VDS= 30V
ID= 165A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRLS3036TRR | 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRLS4030-7P | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030-7TRR | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030-7TRL | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLS4030 | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRLS3036-7P | 功能描述:MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036-7TRL | 功能描述:MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036-7TRR | 功能描述:MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036TRL | 功能描述:MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLS3036TRR | 功能描述:MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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