参数资料
型号: BAS216,115
厂商: NXP Semiconductors
文件页数: 2/9页
文件大小: 119K
描述: DIODE SW 75V 250MA HS SOD110
产品目录绘图: SOD-110 Pin Out
SOD-110 Circuit
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 75V
电流 - 平均整流 (Io): 250mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 4ns
电流 - 在 Vr 时反向漏电: 1µA @ 75V
电容@ Vr, F: 1.5pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-110
供应商设备封装: SOD2
包装: 带卷 (TR)
其它名称: 568-1599-2
934025530115
BAS216 T/R
2002 May 28 2
NXP Semiconductors
Product data sheet
High-speed switching diode BAS216
FEATURES
?
Small ceramic SMD package
?
High switching speed: max.
4
ns
?
Continuous reverse voltage:
max.
75
V
?
Repetitive peak reverse voltage:
max.
85
V
?
Repetitive peak forward current:
max.
500
mA.
APPLICATIONS
?
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
handbook, 4 columnsak
MAM139
ka
cathode mark
top view
side view
bottom view
Fig.1 Simplified outline (SOD110) and symbol.
Marking code:
A6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC
60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
?
85
V
VR
continuous reverse voltage
?
75
V
IF
continuous forward current
note
1
?
250
mA
IFRM
repetitive peak forward current
?
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj
=
25
°C prior to
surge; see
Fig.4
t
=
1
μs
?
4
A
t
=
1
ms
?
1
A
t
=
1
s
?
0.5
A
Ptot
total power dissipation
Tamb
=
25
°C; see
Fig.2; note
1
?
400
mW
Tstg
storage temperature
?65
+150
°C
Tj
junction temperature
?
150
°C
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