参数资料
型号: BAT86,113
厂商: NXP Semiconductors
文件页数: 1/8页
文件大小: 127K
描述: DIODE SCHOTTKY 50V 200MA DO-34
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 100mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 4ns
电流 - 在 Vr 时反向漏电: 5µA @ 40V
电容@ Vr, F: 8pF @ 1V,1MHz
安装类型: 通孔
封装/外壳: DO-204AG,DO-34,轴向
供应商设备封装: DO-34
包装: 标准包装
其它名称: 568-5820-6
BAT86
Schottky barrier single diode
25 July 2012
Product data sheet
Scan or click this QR code to view the latest information for this product
1.
Product profile
1.1
General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode
is suitable for mounting on a 2 E (5.08 mm) pitch.
1.2
Features and benefits
?
Low forward voltage
?
Guard ring protected
?
Hermetically-sealed leaded glass package
1.3
Applications
?
Ultra high-speed switching
?
Voltage clamping
?
Protection circuits
?
Blocking diodes
1.4
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ
= 0.5 ; f
= 20 kHz; T
amb
≤ 50 °C; PCB
mounting, lead length = 4 mm
-
-
200
mA
VR
reverse voltage
-
-
50
V
VF
forward voltage
IF
= 10 mA; T
amb
= 25 °C
-
-
450
mV
2.
Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
K
cathode[1]
2
A
anode
a
k
DO-34 (SOD68)
aaa-003679
K
A
[1]
The marking band indicates the cathode.
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