参数资料
型号: BAT86,113
厂商: NXP Semiconductors
文件页数: 2/8页
文件大小: 127K
描述: DIODE SCHOTTKY 50V 200MA DO-34
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 100mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 4ns
电流 - 在 Vr 时反向漏电: 5µA @ 40V
电容@ Vr, F: 8pF @ 1V,1MHz
安装类型: 通孔
封装/外壳: DO-204AG,DO-34,轴向
供应商设备封装: DO-34
包装: 标准包装
其它名称: 568-5820-6
NXP Semiconductors
BAT86
Schottky barrier single diode
BAT86
All information provided in this document is subject to legal disclaimers.
? NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
2
/
8
3.
Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
BAT86
DO-34
hermetically sealed glass package; axial leaded; 2 leads
SOD68
4.
Marking
Table 4.
Marking codes
Type number
Marking code
BAT86
marking band
5.
Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
50
V
IF
forward current
-
200
mA
IF(AV)
average forward current
δ
= 0.5 ; f
= 20 kHz; T
amb
≤ 50 °C; PCB
mounting, lead length = 4 mm
-
200
mA
IFRM
repetitive peak forward current
tp
≤ 1 s; δ
≤ 0.5
-
500
mA
IFSM
non-repetitive peak forward
current
tp
≤ 10 ms; T
j(init)
= 25 °C
-
5
A
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
-65
125
°C
Tstg
storage temperature
-65
150
°C
6.
Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
320
K/W
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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