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参数资料
| 型号： | BDX54B |
| 厂商： | 意法半导体 |
| 英文描述： | Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管) |
| 中文描述： | Complemetary硅功率达林顿晶体管（功率达林顿晶体管） |
| 文件页数： | 1/6页 |
| 文件大小： | 94K |
| 代理商： | BDX54B |
BDX53A/53B/53C
BDX54B/54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
BDX53B, BDX53C, BDX54B AND BDX54C
ARE SGS-THOMSON PREFERRED
SALESTYPES
APPLICATIONS
s
AUDIO AMPLIFIERS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53A, BDX53B and BDX53C are silicon
epitaxial-base
NPN
power
transistors
in
monolithic
Darlington
configuration
and
are
mounted in Jedec TO-220 plastic package. They
are intented for use in hammer drivers, audio
amplifiers and other medium power linear and
switching applications.
The complementary PNP types for BDX53B and
BDX53C
are
the
BDX54B
and
BDX54C
respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
NPN
BDX53A
BDX53B
BDX53C
PNP
BDX54B
BDX54C
VCBO
Collector-Base Voltage (IE =0)
60
80
100
V
VCEO
Collector-Emit ter Voltage (IB =0)
60
80
100
V
VEBO
Emitter-base Volt age (IC =0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current (repet itive)
12
A
IB
Base Current
0.2
A
Ptot
Tot al Dissipation at Tc
≤ 25 oC60
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. O perat ing Junction Temperature
150
oC
1
2
3
TO-220
R1 Typ. = 10 K
R2 Typ. = 150
1/6
相关PDF资料 |
PDF描述 |
|---|---|
| BDX54C | Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管) |
| BDX54F | Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管) |
| BF304-0PB-006B | SINGLE COLOR DISPLAY CLUSTER, SUPER BLUE, 9 mm |
| BF304-0PB-130B | SINGLE COLOR DISPLAY CLUSTER, SUPER BLUE, 9 mm |
| BF3127-1AG-120A | SINGLE COLOR DISPLAY CLUSTER, AQUA GREEN, 10.16 mm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX54B | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BDX54BFI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-220AB |
| BDX54BG | 功能描述:达林顿晶体管 8A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX54B-S | 功能描述:达林顿晶体管 80V 8A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX54BTU | 功能描述:达林顿晶体管 PNP Darlington 8A 80V RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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