参数资料
型号: BDX54B
厂商: 意法半导体
英文描述: Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
中文描述: Complemetary硅功率达林顿晶体管(功率达林顿晶体管)
文件页数: 6/6页
文件大小: 94K
代理商: BDX54B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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BDX53A/53B/53C-BDX54B/54C
6/6
相关PDF资料
PDF描述
BDX54C Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
BDX54F Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
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相关代理商/技术参数
参数描述
BDX54B 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
BDX54BFI 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-220AB
BDX54BG 功能描述:达林顿晶体管 8A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX54B-S 功能描述:达林顿晶体管 80V 8A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX54BTU 功能描述:达林顿晶体管 PNP Darlington 8A 80V RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel