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| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 11/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
11 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
8.2 Dynamic characteristics for amplifier b
[1]
For the MOS-FET not in use: V
G1-S(a)
= 0 V; V
DS(a)
= 0 V.
Measured in
Figure 34
test circuit.
[2]
Table 11.
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 13 mA.
Symbol
Parameter
y
fs
forward transfer admittance
C
ig1-ss
input capacitance at gate 1
C
ig2-ss
input capacitance at gate 2
C
oss
output capacitance
C
rss
reverse transfer capacitance f = 1 MHz
G
tr
power gain
Dynamic characteristics for amplifier b
Conditions
T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min
28
-
-
-
-
Typ
33
2.0
3.4
0.85
20
Max Unit
43
2.5
-
-
-
mS
pF
pF
pF
fF
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 %; f
w
= 50 MHz; f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1]
31
28
24
-
-
-
35
32
28
5
1.3
1.4
39
36
32
-
1.9
2.1
dB
dB
dB
dB
dB
dB
NF
noise figure
X
mod
cross-modulation
[2]
90
-
-
100
-
88
94
103
-
-
-
-
dB
V
dB
V
dB
V
dB
V
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| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
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