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参数资料
| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 2/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
2 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
1.4 Quick reference data
Table 1.
Per MOS-FET unless otherwise specified.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current (DC)
P
tot
total power dissipation
y
fs
forward transfer admittance
[1]
T
sp
is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Quick reference data
Conditions
Min
-
-
Typ
-
-
-
Max Unit
6
30
180
V
mA
mW
T
sp
107
C
f = 1 MHz
amplifier a; I
D
= 19 mA
amplifier b; I
D
= 13 mA
f = 1 MHz
amplifier a
amplifier b
[1]
-
26
28
31
33
41
43
mS
mS
C
ig1-ss
input capacitance at gate 1
-
-
-
-
-
2.2
2.0
20
1.3
1.4
2.7
2.5
-
1.9
2.1
pF
pF
fF
dB
dB
C
rss
NF
reverse transfer capacitance f = 1 MHz
noise figure
amplifier a; f = 400 MHz
amplifier b; f = 800 MHz
input level for k = 1 % at
40 dB AGC
amplifier a
amplifier b
X
mod
cross-modulation
100
100
-
105
103
-
-
-
150
dB
V
dB
V
C
T
j
junction temperature
Discrete pinning
Description
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)
Simplified outline
Symbol
001aaa706
1
2
3
6
5
4
sym033
G1
(B)
G1
(A)
G2
S
D
(A)
D
(B)
AMP b
AMP a
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相关代理商/技术参数 |
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|---|---|
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
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