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| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 9/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
9 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
V
DS(a)
= V
DS(b)
= 5 V; V
G1-S(b)
= 0 V; f = 50 MHz;
T
amb
= 25
C; see
Figure 33
.
Fig 12. Drain current as a function of gain reduction;
typical values.
V
DS(a)
= 5 V; V
G2-S(a)
= 4 V; V
DS(b)
= V
G1-S(b)
= 0 V;
I
D(a)
= 19 mA.
Fig 13. Input admittance as a function of frequency;
typical values.
001aaa562
gain reduction (dB)
0
60
40
20
16
8
24
32
I
D
(mA)
0
001aaa564
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
b
is
, g
is
(mS)
10
2
b
is
g
is
V
DS(a)
= 5 V; V
G2-S(a)
= 4 V; V
DS(b)
= V
G1-S(b)
= 0 V;
I
D(a)
= 19 mA.
Fig 14. Forward transfer admittance and phase as a
function of frequency; typical values.
V
DS(a)
= 5 V; V
G2-S(a)
= 4 V; V
DS(b)
= V
G1-S(b)
= 0 V;
I
D(a)
= 19 mA.
Fig 15. Reverse transfer admittance and phase as a
function of frequency: typical values.
f (MHz)
10
10
3
10
2
001aaa565
10
10
2
y
fs
(mS)
1
fs
(deg)
10
10
2
1
y
fs
fs
001aaa566
10
2
10
10
3
y
rs
(mS)
1
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
y
rs
rs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
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