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| 型号： | BF1208D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 16/22页 |
| 文件大小： | 253K |
| 代理商： | BF1208D |
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
16 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V;
I
D(B)
= 15 mA
Fig 29. Amplifier B: input admittance as a function of
frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V;
I
D(B)
= 15 mA
Fig 30. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V;
I
D(B)
= 15 mA
Fig 31. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V;
I
D(B)
= 15 mA
Fig 32. Amplifier B: output admittance as a function of
frequency; typical values
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1
10
2
b
is
, g
is
(mS)
10
1
f (MHz)
10
10
3
10
2
b
is
g
is
f (MHz)
10
10
3
10
2
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10
10
2
1
fs
(deg)
10
10
2
1
Y
fs
(mS)
Y
fs
fs
001aag375
10
2
10
10
3
Y
rs
(
μ
S)
1
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
Y
rs
rs
001aag376
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
相关PDF资料 |
PDF描述 |
|---|---|
| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208 | Dual N-channel dual-gate MOSFET |
| BF1208 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1208D T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208D,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF120F | 制造商:Eaton Corporation 功能描述:BF120F RELAY A |
| BF120H | 制造商:Siemens 功能描述: |
| BF120M | 制造商:Siemens 功能描述: |
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