参数资料
型号: BF1208D
厂商: NXP Semiconductors N.V.
元件分类: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封装: BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件页数: 7/22页
文件大小: 253K
代理商: BF1208D
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
7 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
V
DS(A)
= 5 V; V
G1-S(B)
= V
DS(B)
= 0 V; T
j
= 25
°
C.
Fig 6.
Amplifier A: forward transfer admittance as a
function of drain current; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= 5 V;
V
G1-S(B)
= 0 V; T
j
= 25
°
C.
I
D(B)
= internal gate1 current = current in pin
drain (AMP B) if MOSFET (B) is switched off.
Fig 7.
Amplifier A: drain current as a function of
internal gate1 current; typical values
I
D
(mA)
0
32
24
8
16
001aaa556
20
10
30
40
y
fs
(mS)
0
(1)
(2)
(3)
(4)
(5)
(6)
001aac206
I
D(B)
(
μ
A)
0
60
40
20
8
12
4
16
20
I
D(A)
(mA)
0
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相关代理商/技术参数
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BF1208D T/R 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1208D,115 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
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