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参数资料
| 型号： | BF1208D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 5/22页 |
| 文件大小： | 253K |
| 代理商： | BF1208D |
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
5 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
8.
Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
(1) I
D(B)
; R
G1
= 68 k
.
(2) I
D(B)
; R
G1
= 86 k
.
(3) I
D(B)
; R
G1
= 100 k
.
(4) I
D(A)
; R
G1
= 100 k
.
(5) I
D(A)
; R
G1
= 86 k
.
(6) I
D(A)
; R
G1
= 68 k
.
Fig 2.
Drain currents of MOSFET A and B as a
function of V
GG
V
GG
= 5 V: amplifier A is off; amplifier B is on.
V
GG
= 0 V: amplifier A is on; amplifier B is off.
Fig 3.
Functional diagram
V
GG
(V)
0
5
4
2
3
1
001aag356
8
12
4
16
20
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
001aac205
R
G1
V
GG
G1B
G2
G1A
DB
S
DA
Table 8.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 19 mA; unless otherwise specified.
Symbol
Parameter
Conditions
|
y
fs
|
forward transfer admittance
f = 100 MHz; T
j
= 25
°
C
C
iss(G1)
input capacitance at gate1
f = 100 MHz
C
iss(G2)
input capacitance at gate2
f = 100 MHz
C
oss
output capacitance
f = 100 MHz
C
rss
reverse transfer capacitance
f = 100 MHz
G
tr
transducer power gain
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
Dynamic characteristics for amplifier A
[1]
Min
26
Typ
31
2.1
3.4
0.8
30
Max
41
2.6
-
-
-
Unit
mS
pF
pF
pF
fF
[2]
-
[2]
-
[2]
-
[2]
-
32
28
24
-
-
-
36
32
28
3.0
0.9
1.1
40
36
33
-
1.5
1.7
dB
dB
dB
dB
dB
dB
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