- 您现在的位置：买卖IC网 > PDF目录378411 > BF1214 (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1214 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1214<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr |
| 文件页数： | 12/18页 |
| 文件大小： | 211K |
| 代理商： | BF1214 |
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
12 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
8.3 Graphs for amplifier B
V
DS(B)
= 5 V; V
GG
= 5 V; I
D(nom)(B)
= 18 mA;
R
G1(B)
= 68 k
; f
w
= 50 MHz; T
amb
= 25
°
C;
see
Figure 24
.
V
DS(B)
= 5 V; V
GG
= 5 V; V
G2-S(nom)
= 4 V;
R
G1(B)
= 68 k
; f
w
= 50 MHz; f
unw
= 60 MHz;
I
D(nom)(B)
= 18 mA; T
amb
= 25
°
C; see
Figure 24
.
Fig 18. Amplifier B: unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
Fig 17. Amplifier B: typical gain reduction as a function
of the AGC voltage; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
G2-S(nom)
= 4 V; R
G1(B)
= 68 k
; I
D(nom)(B)
= 18 mA; f
w
= 50 MHz; T
amb
= 25
°
C; see
Figure 24
.
Fig 19. Amplifier B: typical drain current as a function of gain reduction; typical values
V
AGC
(V)
0
4
3
1
2
001aah008
30
20
40
10
0
gain
reduction
(dB)
50
gain reduction (dB)
0
50
40
20
30
10
001aah009
90
100
110
V
unw
(dBmV)
80
gain reduction (dB)
0
50
40
20
30
10
001aah010
10
20
30
I
D
(mA)
0
相关PDF资料 |
PDF描述 |
|---|---|
| BF1215 | Dual N-channel dual-gate MOSFET |
| BF1216 | Dual N-channel dual-gate MOSFET |
| BF1217WR | N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214/L,115 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF-1214-07SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1215,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。