- 您现在的位置：买卖IC网 > PDF目录378411 > BF1214 (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1214 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1214<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr |
| 文件页数： | 7/18页 |
| 文件大小： | 211K |
| 代理商： | BF1214 |
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
7 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
(1) V
G2-S
= 4.0 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3.0 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2.0 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1.0 V.
V
DS
= 5 V; T
j
= 25
°
C.
Fig 4.
Gate1 current as a function of gate1 voltage;
typical values
(1) V
G2-S
= 4.0 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3.0 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2.0 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1.0 V.
V
DS
= 5 V; T
j
= 25
°
C.
Fig 5.
Forward transfer admittance as a function of
drain current; typical values
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
°
C.
Drain current as a function of gate1 current;
typical values
V
DS
= 5 V; V
G2-S
= 4 V; R
G1
= 68 k
; T
j
= 25
°
C.
Drain current as a function of gate1 supply
voltage (V
GG
); typical values
Fig 6.
Fig 7.
001aag995
V
G1-S
(V)
0
2.0
1.5
0.5
1.0
40
80
120
I
G1
(
μ
A)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aag996
I
D
(mA)
0
40
30
10
20
20
10
30
40
|y
fs
|
(mS)
0
(7)
(6)
(5)
(4)
(3)
(2)
(1)
001aag997
I
G1
(
μ
A)
0
60
40
20
12
6
18
24
I
D
(mA)
0
001aag998
V
GG
(V)
0
5
4
2
3
1
10
5
15
20
I
D
(mA)
0
相关PDF资料 |
PDF描述 |
|---|---|
| BF1215 | Dual N-channel dual-gate MOSFET |
| BF1216 | Dual N-channel dual-gate MOSFET |
| BF1217WR | N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214/L,115 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF-1214-07SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1215,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。