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参数资料
| 型号： | BF1214 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1214<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr |
| 文件页数： | 13/18页 |
| 文件大小： | 211K |
| 代理商： | BF1214 |
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
13 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 18 mA.
Fig 20. Amplifier B: input admittance as a function of
frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 18 mA.
Fig 21. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 18 mA.
Fig 22. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 18 mA.
Fig 23. Amplifier B: output admittance as a function of
frequency; typical values
001aah011
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
b
is
, g
is
(mS)
10
2
b
is
g
is
f (MHz)
10
10
3
10
2
001aah012
10
10
2
|y
fs
|
(mS)
1
10
10
2
fs
(deg)
1
|y
fs
|
fs
001aah013
10
2
10
10
3
|y
rs
|
(
μ
S)
1
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
rs
|y
rs
|
001aah014
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
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PDF描述 |
|---|---|
| BF1215 | Dual N-channel dual-gate MOSFET |
| BF1216 | Dual N-channel dual-gate MOSFET |
| BF1217WR | N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214/L,115 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF-1214-07SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1215,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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