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参数资料
| 型号： | BF1214 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1214<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr |
| 文件页数： | 5/18页 |
| 文件大小： | 211K |
| 代理商： | BF1214 |
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
5 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
8.
Dynamic characteristics
[1]
Calculated from S-parameters.
[2]
Measured in
Figure 24
test circuit.
Table 8.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 18 mA.
Symbol Parameter
|
y
fs
|
forward transfer admittance
C
iss(G1)
input capacitance at gate1
C
iss(G2)
input capacitance at gate2
C
oss
output capacitance
C
rss
reverse transfer capacitance f = 100 MHz
G
tr
transducer power gain
Dynamic characteristics for amplifier A and B
Conditions
f = 100 MHz; T
j
= 25
°
C
f = 100 MHz
f = 100 MHz
f = 100 MHz
Min
27
Typ
32
2.2
3.5
0.8
20
Max
37
2.7
-
-
-
Unit
mS
pF
pF
pF
fF
[1]
-
[1]
-
[1]
-
[1]
-
amplifier A; B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
amplifier B; B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1]
31
27
22
35
31
26
39
35
30
dB
dB
dB
[1]
31
29
25
-
-
-
35
33
29
3.0
0.9
1.2
39
37
33
-
1.5
1.8
dB
dB
dB
dB
dB
dB
NF
noise figure
Xmod
cross modulation
[2]
90
-
-
102
-
94
99
105
-
-
-
-
dB
μ
V
dB
μ
V
dB
μ
V
dB
μ
V
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