- 您现在的位置：买卖IC网 > PDF目录378411 > BF1218 (NXP SEMICONDUCTORS) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1218 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 10/23页 |
| 文件大小： | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
10 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
8.1.2
Scattering parameters for amplifier A
8.1.3
Noise data for amplifier A
Table 10.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
C; typical values;
unless otherwise specified.
f (MHz)
NF
min
(dB)
opt
(ratio)
400
0.9
0.77
800
1.1
0.73
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V; I
D(A)
= 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
001aag360
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
Table 9.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
C; typical values.
F
(MHz)
Magnitude
(ratio)
(degree)
(ratio)
40
0.9927
4.10
3.1833
100
0.9897
7.68
3.1743
200
0.9852
15.36
3.1494
300
0.9758
22.84
3.1146
400
0.9655
30.19
3.0718
500
0.9513
37.55
3.0156
600
0.9341
44.85
2.9482
700
0.9160
51.99
2.8755
800
0.8964
58.99
2.8003
900
0.8737
65.84
2.7206
1000
0.8499
72.51
2.6352
Scattering parameters for amplifier A
s
11
s
21
Magnitude
s
12
Magnitude
(ratio)
0.0006
0.0011
0.0023
0.0033
0.0042
0.0049
0.0056
0.0061
0.0064
0.0066
0.0067
s
22
Magnitude
(ratio)
0.9927
0.9923
0.9912
0.9904
0.9890
0.9874
0.9853
0.9832
0.9806
0.9793
0.9776
Angle
Angle
(degree)
175.69
171.77
163.56
155.46
147.53
139.61
131.74
124.04
116.41
108.93
101.62
Angle
(degree)
92.99
81.72
79.23
74.65
70.46
66.38
62.22
58.44
54.48
50.78
46.49
Angle
(degree)
1.24
2.54
5.09
7.60
10.10
12.60
15.11
17.61
20.12
22.57
25.05
Noise data for amplifier A
r
n
(ratio)
(degree)
22.7
45.75
0.65
0.62
相关PDF资料 |
PDF描述 |
|---|---|
| BF245A | N-channel FET |
| BF245B | N-channel FET |
| BF245C | N-channel FET |
| BF510 | N-channel silicon FET |
| BF511 | N-channel silicon FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1218,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1222-19SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1225 | 功能描述:EMI/RFI 抑制器及铁氧体 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 产品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流电流: 最大直流电阻: 工作温度范围:- 55 C to + 125 C 封装 / 箱体: 端接类型:SMD/SMT |
发布紧急采购，3分钟左右您将得到回复。