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参数资料
| 型号： | BF1218 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 15/23页 |
| 文件大小： | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
15 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
V
DS(B)
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
C;
R
G1
= 86 k
(connected to V
GG
); see
Figure 3
.
Fig 25. Amplifier B: gate1 current as a function of
gate2 voltage; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V;
R
G1
= 86 k
(connected to V
GG
); f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C; see
Figure 34
.
Fig 26. Amplifier B: unwanted voltage
for 1 % cross modulation as a function of gain
reduction; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V;
R
G1
= 86 k
(connected to V
GG
); f = 50 MHz;
T
amb
= 25
C; see
Figure 34
.
Fig 27. Amplifier B: gain reduction as a function of
AGC voltage; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V;
R
G1
= 86 k
(connected to V
GG
); f = 50 MHz;
T
amb
= 25
C; see
Figure 34
.
Fig 28. Amplifier B: drain current as a function of gain
reduction; typical values
001aag369
V
G2-S
(V)
0
6
4
2
20
30
10
40
50
I
G1
(
μ
A)
0
(5)
(3)
(2)
(1)
(4)
001aag370
gain reduction (dB)
0
60
40
20
100
90
110
120
V
unw
(dB
μ
V)
80
V
AGC
(V)
0
4
3
1
2
001aag371
30
20
40
10
0
50
gain
reduction
(dB)
001aag372
gain reduction (dB)
0
60
40
20
12
6
18
24
I
D
(mA)
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1218,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1222-19SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1225 | 功能描述:EMI/RFI 抑制器及铁氧体 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 产品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流电流: 最大直流电阻: 工作温度范围:- 55 C to + 125 C 封装 / 箱体: 端接类型:SMD/SMT |
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