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参数资料
| 型号： | BF1218 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 3/23页 |
| 文件大小： | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
3 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3.
Type number
4. Marking
Table 4.
Type number
BF1218
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per MOSFET
V
DS
drain-source voltage
I
D
drain current
I
G1
gate1 current
I
G2
gate2 current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the source lead.
Ordering information
Package
Name
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
BF1218
Marking codes
Marking code
M7
Limiting values
Conditions
Min
Max
Unit
DC
DC
-
-
6
30
10
10
180
+150
150
V
mA
-
-
mA
mA
mW
C
C
T
sp
109
C
[1]
-
65
-
Fig 1.
Power derating curve
T
sp
(C)
0
200
150
50
100
001aac193
100
150
50
200
250
P
tot
(mW)
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1218,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1222-19SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1225 | 功能描述:EMI/RFI 抑制器及铁氧体 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 产品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流电流: 最大直流电阻: 工作温度范围:- 55 C to + 125 C 封装 / 箱体: 端接类型:SMD/SMT |
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