参数资料
型号: BR24L08FVJ-WE2
厂商: Rohm Semiconductor
文件页数: 11/41页
文件大小: 0K
描述: IC EEPROM 8KBIT 100KHZ TSSOP-B8J
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (1K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-VSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
BR24L □□ -W Series,BR24S □□□ -W Series
○ Notes on write cycle continuous input
At STOP (stop bit),
write starts.
Technical Note
DATA(n+7) *3
S
T
A
R
T
SLAVE
ADDRESS
W
R
I
T
E
WORD
ADDRESS(n)
DATA(n)
*2
S
T
O
P
S
T
A
R
T
SDA
LINE
1 0 1 0 A2 A1 A0
Note)
R A
/ C
W K
*1
WA
7
WA
0
A
C
K
D7
D0
A
C
K
D0
A
C
K
1 0 1 0
Next command
tWR(maximum : 5ms)
Command is not accepted for this period.
*1 BR24L01A-W becomes Don’t care.
*2 BR24L04-W, BR24L08-W, and BR24L16-W become (n+15).
*3 BR24L32-W and BR24L64-W become (n+31).
Fig.41 Page write cycle
Note)
*1 *2 *3
1 0 1 0 A 2 A 1 A 0
*1 In BR24L16-W, A2 becomes P2.
*2 In BR24L08-W, BR24L16-W, A1 becomes P1.
*3 In BR24L04-W, A0 becomes PS, and in BR24L08-W and in BR24L16-W, A0 becomes P0.
Fig.42 Difference of each type of slave address
○ Notes on page write cycle
List of numbers of page write
Number of Pages
Product
number
8Byte
BR24L01A-W
BR24L02-W
16Byte
BR24L04-W
BR24L08-W
BR24L16-W
32Byte
BR24L32-W
BR24L64-W
The above numbers are maximum bytes for respective types.
Any bytes below these can be written.
In the case BR24L02-W, 1 page=8bytes, but the page write cycle write time is 5ms at maximum for 8byte bulk write.
It does not stand 5ms at maximum × 8byte=40ms(Max.).
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
11/40
2009.09 - Rev.D
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