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参数资料
| 型号： | BSM150GXL120DN2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-39 |
| 文件页数： | 1/9页 |
| 文件大小： | 225K |
| 代理商： | BSM150GXL120DN2 |
Technische Information / Technical Information
IGBT-Module
BSM 150 GXL 120 DN2
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
VCES
1200
V
Kollektor-Dauergleichstrom
TC = 80 °C
IC,nom.
150
A
DC-collector current
TC = 25 °C
IC
200
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
300
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
1050
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
V
Dauergleichstrom
DC forward current
IF
150
A
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
IFRM
300
A
Grenzlastintegral der Diode
I
2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
I
2t
12
kA
2s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
IC = 150A, VGE = 15V, Tvj = 25°C
VCE sat
-
2,5
3
V
collector-emitter saturation voltage
IC = 150A, VGE = 15V, Tvj = 125°C
-
3,1
3,7
V
Gate-Schwellenspannung
gate threshold voltage
IC = 6mA, VCE = VGE, Tvj = 25°C
VGE(th)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
-
10
-
nF
Kollektor-Emitter Reststrom
VCE = 1200V, VGE = 0V, Tvj = 25°C
ICES
-
0,01
1
mA
collector-emitter cut-off current
VCE = 1200V, VGE = 0V, Tvj = 125°C
-8
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
320
nA
prepared by: Mark Münzer
date of publication: 2003-12-09
approved by: Robert Severin
revision: 3.1
1(8)
Datenblatt_BSM150GXL120DN2.xls
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