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参数资料
| 型号： | BSM150GXL120DN2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-39 |
| 文件页数： | 2/9页 |
| 文件大小： | 225K |
| 代理商： | BSM150GXL120DN2 |
Technische Information / Technical Information
IGBT-Module
BSM 150 GXL 120 DN2
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
IC = 150A, VCE = 600V
turn on delay time (inductive load)
VGE = ±15V, RG = 5,6, Tvj = 25°C
td,on
-
0,07
-
s
VGE = ±15V, RG = 5,6, Tvj = 125°C
-
0,07
-
s
Anstiegszeit (induktive Last)
IC = 150A, VCE = 600V
rise time (inductive load)
VGE = ±15V, RG = 5,6, Tvj = 25°C
tr
-
0,05
-
s
VGE = ±15V, RG = 5,6, Tvj = 125°C
-
0,05
-
s
Abschaltverzgerungszeit (ind. Last)
IC = 150A, VCE = 600V
turn off delay time (inductive load)
VGE = ±15V, RG = 5,6, Tvj = 25°C
td,off
-
0,45
-
s
VGE = ±15V, RG = 5,6, Tvj = 125°C
-
0,49
-
s
Fallzeit (induktive Last)
IC = 150A, VCE = 600V
fall time (inductive load)
VGE = ±15V, RG = 5,6, Tvj = 25°C
tf
-
0,034
-
s
VGE = ±15V, RG = 5,6, Tvj = 125°C
-
0,034
-
s
Einschaltverlustenergie pro Puls
IC = 150A, VCE = 600V, VGE = 15V
turn-on energy loss per pulse
RG = 5,6, Tvj = 125°C, LS = 80nH
Eon
-
24,4
-
mWs
Abschaltverlustenergie pro Puls
IC = 150A, VCE = 600V, VGE = 15V
turn-off energy loss per pulse
RG = 5,6, Tvj = 125°C, LS = 80nH
Eoff
-
12,7
-
mWs
Kurzschluverhalten
tP ≤ 10sec, VGE ≤ 15V, RG = 5,6
SC Data
TVj≤125°C, VCC=720V, VCEmax=VCES -LsCE dI/dt
ISC
-
1200
-
A
Modulinduktivitt
stray inductance module
LsCE
-
35
-
nH
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
IF = 150A, VGE = 0V, Tvj = 25°C
VF
-
2,3
2,8
V
forward voltage
IF = 150A, VGE = 0V, Tvj = 125°C
-
1,8
-
V
Rückstromspitze
IF = 150A, - diF/dt = 2500A/sec
peak reverse recovery current
VR = 600V, VGE = -15V, Tvj = 25°C
IRM
-
160
-
A
VR = 600V, VGE = -15V, Tvj = 125°C
-
210
-
A
Sperrverzgerungsladung
IF = 150A, - diF/dt = 2500A/sec
recovered charge
VR = 600V, VGE = -15V, Tvj = 25°C
Qr
-
13
-
As
VR = 600V, VGE = -15V, Tvj = 125°C
-
30
-
As
Abschaltenergie pro Puls
IF = 150A, - diF/dt = 2500A/sec
reverse recovery energy
VR = 600V, VGE = -15V, Tvj = 25°C
Erec
-
3,1
-
mWs
VR = 600V, VGE = -15V, Tvj = 125°C
-
7,7
-
mWs
2(8)
Datenblatt_BSM150GXL120DN2.xls
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