参数资料
型号: BSM150GXL120DN2
元件分类: IGBT 晶体管
英文描述: 200 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-39
文件页数: 6/9页
文件大小: 225K
代理商: BSM150GXL120DN2
Technische Information / Technical Information
IGBT-Module
BSM 150 GXL 120 DN2
E
[
m
J]
IC [A]
E
[
m
J]
RG []
0
10
20
30
40
50
60
70
0
30
60
90
120
150
180
210
240
270
300
Eoff
Eon
Erec
Schaltverluste (typisch)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Switching losses (typical)
Rgon = Rgoff = 5,6 , VCE = 600V, Tj = 125°C
0
10
20
30
40
50
60
0
4
8
12
16
20
24
Eoff
Eon
Erec
Schaltverluste (typisch)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
Switching losses (typical)
IC = 150A , VCE = 600V , Tj = 125°C
6(8)
Datenblatt_BSM150GXL120DN2.xls
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