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| 型号： | BSS84V-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL SOT-563 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 45pF @ 25V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 剪切带 (CT) |
| 其它名称： | BSS84V-7CT |
BSS84V
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Symbol
V DSS
V DGR
Value
-50
-50
Units
V
V
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Continuous
V GSS
I D
? 20
-130
V
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T j , T STG
Value
150
833
-55 to +150
Units
mW
? C/W
? C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
-50
?
??
?
?
-75
?
?
?
?
?
-1
-2
-100
? 50
V
μA
μA
nA
nA
V GS = 0V, I D = -250μA
V DS = -50V, V GS = 0V, T J = +25 ? C
V DS = -50V, V GS = 0V, T J = +125 ? C
V DS = -25V, V GS = 0V, T J = +25 ? C
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (ON)
g FS
-0.8
?
0.05
-1.6
2
?
-2.0
10
?
V
?
S
V DS = V GS , I D = -1mA
V GS = -5V, I D = -0.100A
V DS = -25V, I D = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
45
25
12
pF
pF
pF
V DS = -25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
10
18
?
?
ns
ns
V DD = -30V, I D = -0.27A,
R GEN = 50 ? , V GS = -10V
Notes:
5. R GS ? 20K ? .
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BSS84V
Document number: DS30605 Rev. 9 - 2
2 of 5
www.diodes.com
February 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS84V-7-01 | 制造商:Diodes Incorporated 功能描述: |
| BSS84W | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:P-Channel POWER MOSFET |
| BSS84W _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84W_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84W_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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