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参数资料
| 型号： | BST80 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/12页 |
| 文件大小： | 74K |
| 代理商： | BST80 |
1997 Jun 20
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST80
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
Device mounted on a ceramic substrate; area 2.5 cm
2
; thickness 0.7 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
65
80
±
20
500
1
1
+150
150
V
V
mA
A
W
°
C
°
C
open drain
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
2
300
45
30
8
MAX.
3.5
1
±
100
3
60
45
12
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
V
GS
= 0; I
D
= 10
μ
A
V
DS
= V
GS
; I
D
= 1 mA
V
DS
= 60 V; V
GS
= 0
V
DS
= 0; V
GS
=
±
20 V
V
GS
= 10 V; I
D
= 500 mA
I
D
= 500 mA; V
DS
= 15 V
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
80
1.5
V
V
μ
A
nA
mS
pF
pF
pF
Switching times
(see Figs 2 and 3)
t
on
turn-on time
V
GS
= 0 to 10 V; V
DD
= 50 V;
I
D
= 500 mA
V
GS
= 10 to 0 V; V
DD
= 50 V;
I
D
= 500 mA
10
ns
t
off
turn-off time
15
ns
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