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参数资料
| 型号： | BST80 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 74K |
| 代理商： | BST80 |
1997 Jun 20
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST80
Fig.6 Output characteristics; typical values.
T
j
= 25
°
C.
(1) V
GS
= 10 V.
(2) V
GS
= 6 V.
(3) V
GS
= 5 V.
(4) V
GS
= 4 V.
(5) V
GS
= 3 V.
handbook, halfpage
0
(2)
(3)
(4)
(5)
0.8
0.4
0
VDS (V)
ID
(A)
2
10
4
6
8
MDA173
(1)
Fig.7 Transfer characteristic; typical values.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
0
0.8
0.4
0
VGS (V)
ID
(A)
2
10
4
6
8
MDA172
Fig.8 Drain current as a function of drain-source
on-state resistance; typical values.
T
j
= 25
°
C.
(1) V
GS
= 10 V.
(2) V
GS
= 6 V.
(3) V
GS
= 5 V.
(4) V
GS
= 4 V.
handbook, halfpage
10
0
ID
(mA)
RDSon (
)
2
4
6
8
3
10
2
10
MDA171
(1)
(2)
(3)
(4)
Fig.9
Temperature coefficient of gate-source
threshold voltage; typical values.
V
GSth
at 1 mA.
k
V
at T
j
GSth
at 25
°
C
V
=
handbook, halfpage
50
0
50
150
0.7
k
1.1
100
1
0.9
0.8
MDA175
Tj (
o
C)
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