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参数资料
| 型号： | BU2506DF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, FULL PACK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 66K |
| 代理商： | BU2506DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
32
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 3.0 A; I
B
= 0.79 A
I
C
= 3.0 A; I
B
= 0.79 A
I
C
= 0.3 A; V
CE
= 5 V
I
C
= 3.0 A; V
CE
= 5 V
I
F
= 3.0 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
R
be
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
95
7.5
-
700
-
208
-
-
-
mA
V
V
13.5
55
-
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
-
5.0
1.1
-
7.5
2.0
V
V
12
5.5
1.6
3.8
-
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (line deflection
circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 3.0 A; L
C
= 1.35 mH;
C
FB
= 9.4 nF; I
B(end)
= 0.67 A;
L
= 8
μ
H; -V
(-dI
B
/dt = 0.45 A/
μ
s)
TYP.
47
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
4.5
0.25
6.0
0.5
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400
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| BU2506 | Silicon Diffused Power Transistor |
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| BU2507DF | Silicon Diffused Power Transistor |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2506DFLB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| BU2506DX | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2506-E3/45 | 功能描述:桥式整流器 25 Amp 600 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| BU2506-E3/51 | 功能描述:桥式整流器 25 Amp 600 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| BU2506-E3-51 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Enhanced isoCinka?￠ Bridge Rectifiers |
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