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参数资料
| 型号： | BU2506DF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, FULL PACK-3 |
| 文件页数： | 7/7页 |
| 文件大小： | 66K |
| 代理商： | BU2506DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.400
相关PDF资料 |
PDF描述 |
|---|---|
| BU2506 | Silicon Diffused Power Transistor |
| BU2506DX | Silicon Diffused Power Transistor |
| BU2507AX | Silicon Diffused Power Transistor |
| BU2507DF | Silicon Diffused Power Transistor |
| BU2507DX | Silicon Diffused Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2506DFLB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| BU2506DX | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2506-E3/45 | 功能描述:桥式整流器 25 Amp 600 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| BU2506-E3/51 | 功能描述:桥式整流器 25 Amp 600 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| BU2506-E3-51 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Enhanced isoCinka?￠ Bridge Rectifiers |
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