参数资料
型号: BU9844GUL-WE2
厂商: Rohm Semiconductor
文件页数: 13/29页
文件大小: 0K
描述: IC EEPROM 16KBIT 2WIRE VCSP50L1
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 6-UFBGA,CSPBGA
供应商设备封装: VCSP50L1
包装: 带卷 (TR)
BU9844GUL-W (16Kbit)
Datasheet
Command
1. Write cycle
(1) Arbitrary data is written to EEPROM. When to write only 1 byte, byte write is normally used, and when to write
continuous data of 2 bytes or more, simultaneous write is possible by page write cycle.
SDA
LINE
S
T
A
R
T
SLAVE
ADDRESS
1 0 1 0 P2 P1 P0
W
R
I
T
E
R
/
A
C
WA
7
WORD
ADDRESS
WA
0
A
C
D7
DATA
D0
A
C
S
T
O
P
W K
K
K
WP
Figure 31. Byte write cycle
S
W
T
R
S
SDA
LINE
A
R
T
SLAVE
ADDRESS
1 0 1 0 P2 P1 P0
I
T
E
WA
7
WORD
ADDRESS(n)
WA
0
D7
DATA(n)
D0
DATA(n+15)
D0
T
O
P
R A
/ C
W K
A
C
K
A
C
K
A
C
K
WP
Figure 32. Page write cycle
(2) Data is written to the address designated by word address (n-th address).
(3) By issuing stop bit after 8bit data input, write to memory cell inside starts.
(4) When internal write is started, command is not accepted for tWR (5ms at maximum).
(5) By page write cycle, the following can be written in bulk. Up to 16 bytes.
And when data of the maximum bytes or higher is sent, data from the first byte is overwritten.
(Refer to “Internal address increment” in Page 14.)
(6) As for page write cycle of BU9844GUL-W, after page select bit (PS) of slave address is designated arbitrarily, by
continuing data input of 2 bytes or more, the address of insignificant 4 bits is incremented internally, and data up to 16
bytes can be written.
Note)
1 0 1 0 P2 P1 P0
Figure 33. Difference of slave address of each type
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
13/26
TSZ02201-0R2R0G100470-1-2
17.Sep.2013 Rev.002
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