参数资料
型号: BU9844GUL-WE2
厂商: Rohm Semiconductor
文件页数: 2/29页
文件大小: 0K
描述: IC EEPROM 16KBIT 2WIRE VCSP50L1
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 6-UFBGA,CSPBGA
供应商设备封装: VCSP50L1
包装: 带卷 (TR)
BU9844GUL-W (16Kbit)
Absolute Maximum Ratings (Ta=25°C)
Datasheet
Parameter
Impressed Voltage
Permissible Dissipation
Storage Temperature Range
Operating Temperature Range
Terminal voltage
Symbol
V CC
Pd
Tstg
Topr
-
Ratings
-0.3 to +6.5
0.22
-65 to +125
-40 to +85
-0.3 to Vcc+1.0
Unit
V
W
°C
°C
V
Remarks
When using at Ta=25°C or higher, 2.2mW to be reduced per 1°C
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, Vcc=1.7V to 5.5V)
Parameter
Number of Data rewrite times (Note1)
Data hold years (Note)
Min
1,000,000
40
Limits
Typ.
-
-
Max
-
-
Unit
Times
Years
(Note1) Not 100% TESTED
Recommended Operating Ratings
Parameter
Power Source Voltage
Symbol
Vcc
Ratings
1.7 to 5.5
Unit
V
Input Voltage
Vin
0 to V CC
Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, V CC =1.7V to 5.5V)
Parameter
“HIGH” Input Voltage1
“LOW” Input Voltage1
“HIGH” Input Voltage2
“LOW” Input Voltage2
“LOW” Output Voltage1
“LOW Output Voltage2
Input Leak Current
Output Leak Current
Current Consumption
at Action
Symbol
V IH1
V IL1
V IH2
V IL2
V OL1
V OL2
I LI
I LO
I CC1
I CC2
Min.
0.7V CC
-
0.9V CC
-
-
-
-1
-1
-
-
Limits
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
0.3V CC
-
0.1V CC
0.3
0.2
1
1
2.0
0.5
Unit
V
V
V
V
V
V
μ A
μ A
mA
mA
Conditions
2.5V ≤ V CC ≤ 5.5V
2.5V ≤ V CC ≤ 5.5V
1.7V ≤ V CC < 2.5V
1.7V ≤ V CC < 2.5V
I OL =3.0mA, 2.5V ≤ V CC ≤ 5.5V, (SDA)
I OL =1.5mA, 1.7V ≤ V CC < 2.5V, (SDA)
V IN =0V to V CC
V OUT =0V to V CC (SDA)
V CC =5.5V, f SCL =400kHz, t WR =5ms,
Byte write, Page write
V CC =5.5V, f SCL =400kHz
Random read, Current read,
sequential read
Standby Current
I SB
-
-
2.0
μ A
V CC =5.5V, SDA·SCL=V CC ,
A2=GND, WP=GND
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
2/26
TSZ02201-0R2R0G100470-1-2
17.Sep.2013 Rev.002
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