参数资料
型号: BU99901GUZ-WE2
厂商: Rohm Semiconductor
文件页数: 14/26页
文件大小: 0K
描述: IC EEPROM 32KBIT 2WIRE VCSP
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 32K (4K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 6-XFBGA,CSPBGA
供应商设备封装: VCSP30L1
包装: 带卷 (TR)
BU99901GUZ-W (32Kbit)
Datasheet
● Write Command
○ Write cycle
? Arbitrary data is written to EEPROM. When to write only 1 byte, byte write normally used, and when to write continuous
data of 2 bytes or more, simultaneous write is possible by page write cycle. The maximum number of write bytes is
specified per device of each capacity.
Up to 32 arbitrary bytes can be written.
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
1st WORD
ADDRESS
2nd WORD
ADDRESS
DATA
O
P
SDA
LINE
1 0 1 0 0 0 0
* * *
WA
11
WA
0
D7
D0
R A
A
A
A
/
C
C
C
C
W K
K
K
K
Figure 33. Byte write cycle
S
W
T
A
R
I
S
T
R
T
S LA V E
ADDRESS
T
E
1 st W O R D
A D D R E S S (n)
2n d W O R D
A D D R E S S (n )
D A TA (n )
D A T A (n+ 31)
O
P
SDA
L IN E
1 0 1 0 0 0 0
* *
* *
WA
11
WA
0
D7
D0
D0
R A
/ C
W K
A
C
K
A
C
K
A
C
K
A
C
K
Figure 34. Page write cycle
? Data is written to the address designated by word address (n-th address).
? By issuing stop bit after 8bit data input, write to memory cell inside starts.
? When internal write is started, command is not accepted for tWR (5ms at maximum).
? By page write cycle, the following can be written in bulk: Up to 32 bytes.
(Refer to "Internal address increment in Page 15.)
? As for page write command of BU99901GUZ-W, after page select bit(PS) of slave address is designated arbitrarily, by
continuing data input of 2 bytes or more, the address of insignificant 4 bits is incremented internally, and data up to
16 bytes can be written.
? As for page write cycle of BU99901GUZ-W , after the significant 7 bits of word address, are designated arbitrarily, by
continuing data input of 2 bytes or more, the address of insignificant 5 bits is incremented internally, and data up to 32
bytes can be written.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
14/23
TSZ02201-0R2R0G100280-1-2
4.SEP.2012 Rev.001
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