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参数资料
| 型号： | C67070-A2007-A70 |
| 厂商： | SIEMENS AG |
| 英文描述： | PT 21C 21#16 SKT RECP |
| 中文描述： | IGBT功率模块（单开关包括快速续流二极管面积扩大二极管） |
| 文件页数： | 2/9页 |
| 文件大小： | 126K |
| 代理商： | C67070-A2007-A70 |
Semiconductor Group
2
Mar-29-1996
BSM300GA120DN2E3166
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 12 mA
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 300 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 300 A, T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
3.1
2.5
3.7
3
I
CES
-
-
16
4
-
5.6
mA
I
GES
-
-
320
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 300 A
Input capacitance
g
fs
124
-
-
S
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
C
iss
-
22
-
nF
C
oss
-
3.3
-
C
rss
-
1.2
-
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