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参数资料
| 型号： | C67070-A2007-A70 |
| 厂商： | SIEMENS AG |
| 英文描述： | PT 21C 21#16 SKT RECP |
| 中文描述： | IGBT功率模块（单开关包括快速续流二极管面积扩大二极管） |
| 文件页数： | 4/9页 |
| 文件大小： | 126K |
| 代理商： | C67070-A2007-A70 |
Semiconductor Group
4
Mar-29-1996
BSM300GA120DN2E3166
Power dissipation
P
tot
=
(T
C
)
parameter: T
j
≤
150 °C
0
20
40
60
80
100
120
°C
T
C
160
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
W
2600
P
tot
Safe operating area
I
C
=
(V
CE
)
parameter: D= 0, T
C
= 25°C , T
j
≤
150 °C
0
10
0
10
1
10
2
10
3
10
4
10
A
I
C
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 μs
tp = 19.0μs
Collector current
I
C
=
(T
C
)
parameter: V
GE
≥
15 V , T
j
≤
150 °C
0
20
40
60
80
100
120
°C
T
C
160
0
50
100
150
200
250
300
350
400
A
500
I
C
Transient thermal impedance IGBT
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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| C67070-A2301-A70 | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-32 |
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| C67070-A2107-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
| C67070-A2111-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
| C67070-A2120-A67 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
| C67070-A2300-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
| C67070-A2301-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
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