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参数资料
| 型号： | C67070-A2007-A70 |
| 厂商： | SIEMENS AG |
| 英文描述： | PT 21C 21#16 SKT RECP |
| 中文描述： | IGBT功率模块（单开关包括快速续流二极管面积扩大二极管） |
| 文件页数： | 3/9页 |
| 文件大小： | 126K |
| 代理商： | C67070-A2007-A70 |
Semiconductor Group
3
Mar-29-1996
BSM300GA120DN2E3166
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 300 A
R
Gon
= 3.3
Rise time
t
d(on)
-
100
200
ns
V
CC
= 600 V, V
GE
= 15 V, I
C
= 300 A
R
Gon
= 3.3
Turn-off delay time
t
r
-
110
220
V
CC
= 600 V, V
GE
= -15 V, I
C
= 300 A
R
Goff
= 3.3
Fall time
t
d(off)
-
600
800
V
CC
= 600 V, V
GE
= -15 V, I
C
= 300 A
R
Goff
= 3.3
t
f
-
80
120
Free-Wheel Diode
Diode forward voltage
I
F
= 300 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 300 A, V
GE
= 0 V, T
j
= 125 °C
Reverse recovery time
I
F
= 300 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -2500 A/μs, T
j
= 125 °C
Reverse recovery charge
I
F
= 300 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -2500 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
1.4
1.35
1.8
-
2.3
V
t
rr
-
0.6
-
μs
Q
rr
-
-
45
16
-
-
μC
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| C67070-A2107-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
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| C67070-A2300-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
| C67070-A2301-A70 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
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