参数资料
型号: CAT25512YI-GT3
厂商: ON Semiconductor
文件页数: 2/16页
文件大小: 0K
描述: IC EEPROM 512KB SPI SER 8-TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 512K (64K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 标准包装
其它名称: CAT25512YI-GT3OSDKR
CAT25512
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
? 45 to +130
? 65 to +150
? 0.5 to +6.5
Units
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3, 4)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re ? programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +1 25 ° C and V CC = 1.7 V to 5.5 V, T A = ? 20 ° C to +85 ° C, unles s otherwise specified) (Note 5)
Symbol
Parameter
Test Conditions
Min
Max
Units
I CCR
Supply Current
(Read Mode)
Read, SO open /
? 40 ° C to +85 ° C
V CC = 1.8 V, f SCK = 5 MHz
V CC = 2.5 V, f SCK = 10 MHz
1.2
1.8
mA
mA
V CC = 5.5 V, f SCK = 20 MHz
3
mA
Read, SO open /
? 40 ° C to +125 ° C
2.5 V < V CC < 5.5 V,
f SCK = 10 MHz
3
mA
I CCW
Supply Current
(Write Mode)
Write, CS = V CC
2
mA
I SB1
I SB2
I L
I LO
Standby Current
Standby Current
Input Leakage Current
Output Leakage
Current
V IN = GND or V CC ,
CS = V CC , WP = V CC ,
HOLD = V CC ,
V CC = 5.5 V
V IN = GND or V CC ,
CS = V CC , WP = GND,
HOLD = GND,
V CC = 5.5 V
V IN = GND or V CC
CS = V CC
V OUT = GND or V CC
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 2
? 2
1
3
3
5
2
2
m A
m A
m A
m A
m A
V IL1
V IH1
V IL2
V IH2
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
V CC ≥ 2.5 V
V CC ≥ 2.5 V
V CC < 2.5 V
V CC < 2.5 V
? 0.5
0.7V CC
? 0.5
0.75V CC
0.3V CC
V CC + 0.5
0.25V CC
V CC + 0.5
V
V
V
V
V OL1
V OH1
V OL2
V OH2
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V CC ≥ 2.5 V, I OL = 3.0 mA
V CC ≥ 2.5 V, I OH = ? 1.6 mA
V CC < 2.5 V, I OL = 150 m A
V CC < 2.5 V, I OH = ? 100 m A
V CC ? 0.8V
V CC ? 0.2V
0.4
0.2
V
V
V
V
5. Devices identified with Date Code before January 2013 are specified for V CC ≥ 2.5 V only
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