参数资料
型号: CM3202-00DE
厂商: ON Semiconductor
文件页数: 9/11页
文件大小: 0K
描述: IC CONVERTER DDR DDR2 WDFN8
产品变化通告: Product Discontinuation 30/Sept/2011
标准包装: 3,000
应用: 转换器,DDR,DDR2
输入电压: 3.1 V ~ 3.6 V
输出数: 2
输出电压: 1.7 V ~ 2.8 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-WDFN(3x3)
包装: 带卷 (TR)
CM3202 ? 00
APPLICATION INFORMATION (Cont’d)
Adjusting VDDQ Output Voltage
The CM3202 ? 00 internal bandgap reference is set at 1.25 V. The V DDQ voltage is adjustable by using a resistor divider, R1
and R2:
V DDQ + V ADJ
R 1 ) R 2
R 2
where V ADJ = 1.25 V. For best regulator stability, we recommend that R 1 and R 2 not exceed 10 k W each.
Shutdown
ADJSD also serves as a shutdown pin. When this is pulled high (SHDN_H), both the VDDQ and the VTT outputs tri ? state
and could sink/source less than 10 m A. During shutdown, the quiescent current is reduced to less than 0.5 mA, independent
of output load.
It is recommended that a low leakage Schottky diode be placed between the ADJSD Pin and an external shutdown signal
to prevent interference with the ADJ pin’s normal operation. When the diode anode is pulled low, or left open, the CM3202 ? 00
is again enabled.
Current Limit, Foldback and Over ? temperature Protection
The CM3202 ? 00 features internal current limiting with thermal protection. During normal operation, V DDQ limits the output
current to approximately 2 A and V TT limits the output current to approximately ± 2 A. When V TT is current limiting into a hard
short circuit, the output current folds back to a lower level, about 1 A, until the over ? current condition ends. While current
limiting is designed to prevent gross device failure, care should be taken not to exceed the power dissipation ratings of the
package. If the junction temperature of the device exceeds 170 ° C (typical), the thermal protection circuitry triggers and
tri ? states both VDDQ and VTT outputs. Once the junction temperature has cooled to below about 120 ° C the CM3202 ? 00
returns to normal operation.
Thermal Considerations
Typical Thermal Characteristics
The overall junction to ambient thermal resistance ( q JA ) for device power dissipation (P D ) primarily consists of two paths
in the series. The first path is the junction to the case ( q JC ) which is defined by the package style and the second path is case
to ambient ( q CA ) thermal resistance which is dependent on board layout. The final operating junction temperature for any
condition can be estimated by the following thermal equation:
T JUNC + T AMB ) P D
+ T AMB ) P D
( q JC ) ) P D
( q CA )
( q CA )
P D + 170° C * 85° C + 1.5 W
When a CM3202 ? 00 using WDFN8 package is mounted on a double ? sided printed circuit board with four square inches
of copper allocated for “heat spreading,” the q JA is approximately 55 ° C/W. Based on the over temperature limit of 170 ° C with
an ambient temperature of 85 ° C, the available power of the package will be:
55° C W
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