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参数资料
| 型号： | CPC3703CTR |
| 厂商： | CLARE INC |
| 元件分类： | JFETs |
| 中文描述： | 0.36 A, 250 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 97K |
| 代理商： | CPC3703CTR |
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications
and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of
Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability,
fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental
damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-CPC3703-R03
Copyright 2009, Clare, Inc.
All rights reserved. Printed in USA.
10/13/09
For additional information please visit our website at: www.clare.com
4
CPC3703
MECHANICAL DIMENSIONS
RoHS
2002/95/EC
e3
Pb
Manufacturing Information
Soldering
For proper assembly, the component must be
processed in accordance with the current revision
of IPC/JEDEC standard J-STD-020. Failure to
follow the recommended guidelines may cause
permanent damage to the device resulting in impaired
performance and/or a reduced lifetime expectancy.
Washing
Clare does not recommend ultrasonic cleaning or the
use of chlorinated solvents.
2.286 ± 2.591
(0.090 0.102)
3.937 - 4.242
(0.155 - 0.167)
1.397 - 1.600
(0.055 - 0.063)
0.356 - 0.432
(0.014 - 0.017)
SOT89 Package
Recommended PCB Land Pattern
Dimensions
mm
(inches)
1.626 - 1.829
(0.064 - 0.072)
R 0.254
(R 0.010)
0.889 - 1.194
(0.035 - 0.047)
0.356 - 0.483
(0.014 - 0.019)
0.432 - 0.559
(0.017 - 0.022)
4.394 - 4.597
(0.173 - 0.181)
1.422 - 1.575
(0.056 - 0.062)
2.921 - 3.073
(0.115 - 0.121)
0.60
(0.024)
TYP 3
1.40
(0.055)
2.70
(0.107)
1.90
(0.075)
1.90
(0.074)
45
5.00
(0.197)
50
Top Cover
Tape
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
Tape and Reel Packaging for SOT89 Package
Dimensions
mm
(inches)
Embossment
Embossed
Carrier
330.2 Dia
(13.00 Dia)
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
K
0=1.90 ± 0.10
(0.075 ± 0.004)
P=8.00 ± 0.10
(0.315 ± 0.004)
A
0=4.91 ± 0.10
(0.193 ± 0.004)
B
0=4.52 ± 0.10
(0.178 ± 0.004)
W=12.00 ± 0.30
(0.472 ± 0.012)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPC3703ZTR | 功能描述:MOSFET N-CH 250V SOT-89 制造商:ixys integrated circuits division 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:耗尽模式 漏源极电压（Vdss）:250V 电流 - 连续漏极（Id）（25°C 时）:- 不同?Id，Vgs 时的?Rds On（最大值）:4 欧姆 @ 200mA，0V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:350pF @ 25V 功率 - 最大值:1.1W 工作温度:-55°C ~ 125°C（TJ） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1,000 |
| CPC3708ACTR | 制造商:IXYS Integrated Circuits Division 功能描述:CPC |
| CPC3708CTR | 功能描述:MOSFET N-CH 350V 0.005A SOT-89 制造商:ixys integrated circuits division 系列:- 包装:剪切带（CT） 零件状态:停产 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:耗尽模式 漏源极电压（Vdss）:350V 电流 - 连续漏极（Id）（25°C 时）:5mA（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:14 欧姆 @ 50mA，350mV 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:300pF @ 0V 功率 - 最大值:1.1W 工作温度:-40°C ~ 110°C（TA） 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1 |
| CPC3708ZTR | 制造商:IXYS Integrated Circuits Division 功能描述:N-CHANNEL DEPLETION MOSFET 350 V 14 OHMS SOT-223 |
| CPC3710 | 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion-Mode FET |
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