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| 型号： | DMC2020USD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL COMPL PAIR 8SO |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A，5.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1149pF @ 10V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | SO-8 |
| 包装： | 标准包装 |
| 其它名称： | DMC2020USD-13DIDKR |
A Product Line of
Diodes Incorporated
DMC2020USD
Electrical Characteristics – Q1 N-CHANNEL
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transfer Admittance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Continuous Source Current
V GS(th)
R DS (ON)
|Y fs |
V SD
I S
0.5
-
-
-
-
1.1
13
18
16
0.7
-
1.5
20
28
-
1.2
1.8
V
m ?
S
V
A
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 7A
V GS = 2.5V, I D = 3A
V DS = 5V, I D = 9.4A
V GS = 0V, I S = 1.3A
-
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 10)
C iss
C oss
C rss
R g
Q g
-
-
-
-
-
1149
157
142
1.51
6.0
-
-
-
-
-
pF
?
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 2.5V
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Q g
Q gs
Q gd
-
-
-
11.6
2.7
3.4
-
-
-
nC
V GS = 4.5V
V DS = 10V
I D = 9.4A
Turn-On Delay Time (Note 10)
t D(on)
-
11.67
-
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
t r
t D(off)
t f
-
-
-
12.49
35.89
12.33
-
-
-
ns
V GS = 4.5V, V DS = 10V,
R G = 6 ? , I D = 1A
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q1 N-CHANNEL
30
20
25
V GS = 10V
V GS = 4.5V
15
V DS = 5V
V GS = 4.0V
20
V GS = 3.5V
V GS = 3.0V
15
10
V GS = 2.5V
V GS = 2.0V
10
5
T A = 150°C
T A = 125°C
5
V GS = 1.8V
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5 1 1.5
2
0
0
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMC2020USD
Document number: DS32121 Rev. 4 - 2
4 of 11
www.diodes.com
February 2011
? Diodes Incorporated
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