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| 型号： | DMC2400UV-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N P CH 20V SOT563 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.03A，700mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 480 毫欧 @ 200mA，5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 37.1pF @ 10V |
| 功率 - 最大： | 450mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 其它名称： | DMC2400UV-7DIDKR |
DMC2400UV
Electrical Characteristics - Q1 N-CHANNEL @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
-
-
100
±1
±4.0
V
nA
μ A
V GS = 0V, I D = 1mA
V DS = 20V, V GS = 0V
V GS = ±5V, V DS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.5
-
0.9
V
V DS = V GS , I D = 250 μ A
-
-
0.3
0.35
0.48
0.5
V GS = 5.0V, I D = 200mA
V GS = 4.5V, I D = 200mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
0.45
0.55
0.7
0.9
Ω
V GS = 2.5V, I D = 200mA
V GS = 1.8V, I D = 100mA
-
-
0.65
2
1.5
-
V GS = 1.5V, I D = 50mA
V GS = 1.2V, I D = 1mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
-
1.4
0.7
-
1.2
S
V
V DS = 3V, I D = 200mA
V GS = 0V, I S = 500mA,
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
37.1
6.5
4.8
68
0.5
0.07
0.1
4.06
7.28
13.74
10.54
-
-
-
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V,
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2.0
V GS = 4.5V
1.5
V GS = 2.5V
V DS = 5V
1.5
V GS = 2.0V
1.0
V GS = 1.8V
1.0
0.5
0.5
V GS = 1.5V
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
0
V GS = 1.2V
0
T A = -55°C
0
1 2 3 4
5
0
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMC2400UV
Document number: DS35537 Rev. 6 - 2
3 of 10
www.diodes.com
February 2012
? Diodes Incorporated
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