参数资料
型号: DMC2400UV-7
厂商: Diodes Inc
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N P CH 20V SOT563
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.03A,700mA
开态Rds(最大)@ Id, Vgs @ 25° C: 480 毫欧 @ 200mA,5V
Id 时的 Vgs(th)(最大): 900mV @ 250µA
闸电荷(Qg) @ Vgs: 0.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 37.1pF @ 10V
功率 - 最大: 450mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-563
包装: 标准包装
其它名称: DMC2400UV-7DIDKR
DMC2400UV
2.0
0.8
V GS = 4.5V
1.6
0.6
T A = 150°C
1.2
V GS = 1.5V
0.4
T A = 125°C
T A = 85°C
0.8
T A = 25°C
0.4
V GS = 1.8V
V GS = 2.5V
0.2
T A = -55°C
V GS = 5.0V
V GS = 4.5V
0
0
0.4 0.8 1.2 1.6
2
0
0
0.4 0.8 1.2 1.6
1.6
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
V GS = 4.5V
0.8
I D , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.4
1.2
I D = 1.0A
V GS = 2.5.V
I D = 500mA
0.6
0.4
V GS = 2.5V
I D = 500mA
1.0
0.8
0.2
V GS = 4.5V
I D = 1.0A
0.6
-50
-25 0 25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
1.2
1.0
T J , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.6
T J , JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.2
T A = 25°C
0.8
I D = 1mA
0.6
I D = 250μA
0.8
0.4
0.4
0.2
0
-50
-25
0 25 50 75 100 125 150
0
0
0.2
0.4 0.6 0.8 1.0
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMC2400UV
Document number: DS35537 Rev. 6 - 2
4 of 10
www.diodes.com
February 2012
? Diodes Incorporated
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