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| 型号： | DMC3035LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL PAIR 2000MW 8-SOIC |
| 产品变化通告： | End Of Life 16/Aug/2010 |
| 标准包装： | 2,500 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A，5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 384pF @ 15V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
DMC3035LSD
Electrical Characteristics N-CHANNEL
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
± 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 24V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
|Y fs |
V SD
1
?
?
?
0.5
?
28
51
7.7
?
2.1
35
61
?
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 6.9A
V GS = 4.5V, I D = 5.0A
V DS = 5V, I D = 6.9A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
384
?
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C oss
C rss
R G
?
?
?
67
48
1.3
?
?
?
pF
pF
Ω
V DS = 15V, V GS = 0V, f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
?
?
?
4.3
8.6
1.2
2.5
?
?
?
nC
V DS = 10V, V GS = 4.5V, I D = 10A
V DS = 10V, V GS = 10V, I D = 10A
V DS = 10V, V GS = 10V, I D = 10A
V DS = 10V, V GS = 10V, I D = 10A
Electrical Characteristics P-CHANNEL
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1.0
± 100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -24V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
|Y fs |
V SD
-1
?
?
?
-0.5
?
56
98
?
?
-2.1
65
115
5.2
-1.2
V
m Ω
S
V
V DS = V GS , I D = -250 μ A
V GS = -10V, I D = -5A
V GS = -4.5V, I D = -4A
V DS = -10V, I D = -5A
V GS = 0V, I S = -2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
336
?
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C oss
C rss
R G
?
?
?
70
49
4.6
?
?
?
pF
pF
Ω
V DS = -25V, V GS = 0V, f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
?
?
?
4.0
7.8
1.0
2.5
?
?
?
nC
V DS = 15V, V GS = -4.5V, I D = -5A
V DS = 15V, V GS = -10V, I D = -5A
V DS = 15V, V GS = -10V, I D = -5A
V DS = 15V, V GS = -10V, I D = -5A
Notes:
5. Short duration pulse test used to minimize self-heating effect.
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
2 of 7
www.diodes.com
October 2008
? Diodes Incorporated
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