参数资料
型号: DMC3035LSD-13
厂商: Diodes Inc
文件页数: 4/7页
文件大小: 0K
描述: MOSFET COMPL PAIR 2000MW 8-SOIC
产品变化通告: End Of Life 16/Aug/2010
标准包装: 2,500
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6.9A,5A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 6.9A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 8.6nC @ 10V
输入电容 (Ciss) @ Vds: 384pF @ 15V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)
DMC3035LSD
N-CHANNEL (continued)
20
16
1,000
C iss
f = 1MHz
12
100
8
4
T A = 25°C
C oss
C rss
0
0
0.2 0.4 0.6 0.8 1 1.2
10
0
5 10 15 20 25
30
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
1
D = 0.7
D = 0.5
D = 0.3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Total Capacitance
0.1
D = 0.1
D = 0.05
D = 0.9
R θ JA (t) = r(t) * R θ JA
R θ JA = 113°C/W
D = 0.02
0.01
D = 0.01
P(pk)
t 1
t 2
T J A = P * R θ JA (t)
D = 0.005
-T
Duty Cycle, D = t 1 2
/t
D = Single Pulse
0.001
0.00001
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
4 of 7
www.diodes.com
October 2008
? Diodes Incorporated
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