参数资料
型号: DMC3035LSD-13
厂商: Diodes Inc
文件页数: 7/7页
文件大小: 0K
描述: MOSFET COMPL PAIR 2000MW 8-SOIC
产品变化通告: End Of Life 16/Aug/2010
标准包装: 2,500
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6.9A,5A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 6.9A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 8.6nC @ 10V
输入电容 (Ciss) @ Vds: 384pF @ 15V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)

DMC3035LSD
Suggested Pad Layout
X
Dimensions
X
Value (in mm)
0.60
C1
Y
C1
C2
1.55
5.4
1.27
C2
Y
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
7 of 7
www.diodes.com
October 2008
? Diodes Incorporated
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