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| 型号： | DMG1016UDW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 20V 1.07A SOT363 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.07A，845mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60.67pF @ 16V |
| 功率 - 最大： | 330mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG1016UDW-7DIDKR |
DMG1016UDW
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
330
379
-55 to +150
Units
mW
°C/W
°C
Maximum Ratings N-CHANNEL – Q1 (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±6
Units
V
V
Continuous Drain Current (Note 5)
Steady
State
T A = +25°C
T A = +85°C
I D
1066
690
mA
Maximum Ratings P-CHANNEL – Q2 (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±6
Units
V
V
Continuous Drain Current (Note 5)
Steady
State
T A = +25°C
T A = +85°C
I D
-845
-548
mA
Electrical Characteristics N-CHANNEL – Q1 (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
20
—
—
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
—
—
—
—
100
±1.0
nA
μ A
V DS =20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.5
—
1.0
V
V DS = V GS , I D = 250 μ A
—
0.3
0.45
V GS = 4.5V, I D = 600mA
Static Drain-Source On-Resistance
R DS(ON)
0.4
0.6
?
V GS = 2.5V, I D = 500mA
0.5
0.75
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
|Y fs |
V SD
—
—
1.4
0.7
—
1.2
S
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
2 of 9
www.diodes.com
January 2014
? Diodes Incorporated
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