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| 型号： | DMG2301U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.5A SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 2.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 608pF @ 6V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG2301U-7DIDKR |
DMG2301U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
-2.7
-2.1
-2.1
-1.7
-27
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.8
157
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1.0
±100
V
? A
nA
V GS = 0V, I D = -250 ? A
V DS = -16V, V GS = 0V
V GS = ? 8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
-0.45
?
?
??
?
?
10
-0.75
-1.0
80
110
?
-1.0
V
m ?
S
V
V DS = V GS , I D = -250 ? A
V GS = -4.5V, I D = -2.8A
V GS = -2.5V, I D = -2.0A
V DS = -5V, I D = -2.8A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
??
?
?
?
?
?
?
?
608
82
72
44.9
6.5
0.9
1.5
12.5
10.3
46.5
22.2
?
?
?
??
?
?
?
40
30
140
66
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = -6V, V GS = 0V
f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1.0MHz
V GS = -4.5V, V DS = -10V, I D = -3A
V DS = -10V, V GS = -4.5V,
R L = 10 ? , R G = 1.0 ? , I D = -1A
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature..
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG2301U
Document number: DS31848 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
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