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| 型号： | DMG4712SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11.2A 8SOIC |
| 标准包装： | 1 |
| 系列： | SiMFET |
| FET 型： | MOSFET N 通道，肖特基，金属氧化物! |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 11.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2296pF @ 15V |
| 功率 - 最大： | 1.55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4712SSS-13DIDKR |
DMG4712SSS
Electrical Characteristics @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
100
±100
V
μ A
nA
V GS = 0V, I D = 1mA
V DS = 30V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
V GS(th)
R DS (ON)
|Y fs |
V SD
I S
1.0
-
-
-
-
-
10
11
23
0.37
-
2.2
14.0
15.4
-
0.5
5
V
m ?
S
V
A
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 11.2A
V GS = 4.5V, I D = 10A
V DS = 5V, I D = 11.2A
V GS = 0V, I S = 1A
-
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 10V)
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
2296
164
120
1.3
45.7
19.3
5.0
2.9
5.5
24.4
33.1
6.6
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 10V, I D = 11.2A
V GS = 10V, V DS = 15V,
R G = 3 ? , R L = 1.2 ?
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
30
V GS = 4.5V
V GS = 4.0V
V DS = 5V
25
20
V GS = 3.5V
V GS = 2.5V
25
20
V GS = 3.0V
15
10
15
10
V GS = 150°C
V GS = 125°C
V GS = 85°C
5
V GS = 2.2V
V GS = 2.0V
5
V GS = 25°C
V GS = -55°C
0
0
0.5 1 1.5
2
0
0
0.5
1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMG4712SSS
Document number: DS32040 Rev. 6 - 2
2 of 6
www.diodes.com
August 2010
? Diodes Incorporated
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