- 您现在的位置：买卖IC网 > Datasheet目录404 > DMG4800LSD-13 (Diodes Inc)MOSFET 2N-CH 30V 8.54A SO8 Datasheet资料下载
参数资料
| 型号： | DMG4800LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 8.54A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.54A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.56nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 798pF @ 10V |
| 功率 - 最大： | 1.17W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4800LSD-13DIDKR |
DMG4800LSD
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
t<10s
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
7.5
6.0
9.8
7.7
6.4
5.0
8.4
6.6
A
A
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Notes 7 & 8) L = 0.1mH
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
I S
I DM
I AR
E AR
2
42
17
14
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Symbol
P D
Value
1.17
Units
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
107
61
1.5
83
49
14.5
-55 to 150
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS(on)
|Y fs |
V SD
0.8
-
-
-
-
12
16
8
0.72
1.6
16
22
-
0.94
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 9A
V GS = 4.5V, I D = 7A
V DS = 10V, I D = 9A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
798
128
122
1.37
8.56
1.8
2.5
5.03
4.50
26.33
8.55
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 5V, V DS = 15V,
I D = 9A
V DD = 15V, V GEN = 10V,
R L = 15 ? , R G = 6 ? , I D = 1A
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C.
8. Applicable to products manufactured with Data Code “1146” (Nov, 2011) and newer.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMG4800LSD
Document number: DS31858 Rev. 6 - 2
2 of 6
www.diodes.com
March 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG4822SSD-13 | MOSFET DL N-CH 30V 10A SO-8 |
| DMG4932LSD-13 | MOSFET 2N-CH 30V 9.5A SO8 |
| DMG5802LFX-7 | MOSFET N-CH DUAL 24V DFN5020-6 |
| DMG6602SVT-7 | MOSFET N/P-CH 30V TSOT23-6 |
| DMG6898LSD-13 | MOSFET 2N-CH 20V 9.5A SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG4800LSDQ-13 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel |
| DMG4812SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
| DMG4812SSS-13 | 功能描述:两极晶体管 - BJT MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMG4822SSD | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIO 30V 10A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0134ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.42W ;RoHS Compliant: Yes |
| DMG4822SSD-13 | 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。