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| 型号： | DMN2114SN-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1.2A SC59-3 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SC-59 Package Top SC-59 Package Side |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 180pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SC-59-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2114SNDIDKR |
DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
SC-59
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Case: SC59
Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.014 grams (approximate)
Drain
D
Gate
ESD protected
TOP VIEW
Gate
Protection
Diode
Source
G
TOP VIEW
S
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
20
Unit
V
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
V GSS
I D
± 12
1.2
4.0
V
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P d
R θ JA
T j , T STG
Value
500
250
-55 to +150
Unit
mW
° C /W
° C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV DSS
20
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V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T j = 25°C
I DSS
I GSS
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10
± 10
μ A
μ A
V DS = 24V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.7
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3.3
0.8
1.40
0.100
0.160
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1.1
V
Ω
S
V
V DS = 10V, I D = 1.0mA
V GS = 4.5V, I D = 0.5A
V GS = 2.5V, I D = 0.5A
V DS = 10V, I D = 0.5A
V GS = 0V, I S = 1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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180
120
45
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pF
pF
pF
V DS = 10V, V GS = 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t D(ON)
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10
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ns
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
t D(OFF)
t r
t f
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50
15
45
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ns
ns
ns
V DD = 10V, I D = 0.5A,
V GS = 5.0V, R GEN = 50 Ω
Notes:
1. Pulse width ≤ 300 μ S, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN2114SN
Document number: DS30829 Rev. 5 - 2
1 of 4
www.diodes.com
August 2011
? Diodes Incorporated
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