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| 型号： | DMN2170U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.3A SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 End Of Life 16/Aug/2010 Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 217pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 其它名称： | DMN2170UDIDKR |
DMN2170U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Low On-Resistance
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Case: SOT-23
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70m Ω @V GS = 4.5V
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Case Material: Molded Plastic, “Green” Molding
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? 100m Ω @V GS = 2.5V
? 170m Ω @V GS = 1.5V
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 6)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
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Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
SOT-23
Gate
D
ESD PROTECTED TO 3kV
TOP VIEW
Gate
Protection
Diode
Source
G
S
Equivalent Circuit
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Characteristic
Symbol
V DSS
V GSS
I D
I DM
Value
20
±12
2.3
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@T A = 25°C unless otherwise specified
Symbol
P D
R θ JA
T J , T STG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
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28
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1
± 10
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
0.45
?
1.0
V
V DS = V GS , I D = 250 μ A
50
70
V GS = 4.5V, I D = 3A
Static Drain-Source On-Resistance
R DS (ON)
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70
100
m Ω
V GS = 2.5V, I D = 2.3A
125
170
V GS = 1.5V, I D = 0.5A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
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6
0.7
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0.9
S
V
V DS =5V, I D = 2.4A
V GS = 0V, I S = 1.05A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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?
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217
62
34
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pF
pF
pF
V DS = 10V, V GS = 0V
f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb 2 O 3 Fire Retardants.
DMN2170U
Document number: DS31182 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
? Diodes Incorporated
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